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| Amplifier, Power, 1.2W 5.7-8.5 GHz Features 1.5 Watt Saturated Output Power Level Variable Drain Voltage (6-10V) Operation (R) MSAG Process MAAPGM0068-DIE Rev B Preliminary Datasheet Description The MAAPGM0068-DIE is a 3-stage 1.2W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAGTM) Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications Point-to-Point Radio 6, 7, and 8 GHz Bands SatCom Broadband Wireless Access Also Available in: Description Part Number Ceramic MAAPGM0068 Sample Board (Die) MAAP-000068-SMB004 SAMPLES Mechanical Sample (Die) MAAP-000068-MCH000 Electrical Characteristics: TB = 25C1, Z0 = 50 , VDD = 8V, IDQ = 320 mA2, Pin = 8 dBm, RG = 300 Parameter Bandwidth Output Power 1-dB Compression Point Small Signal Gain Power Added Efficiency Input VSWR Output VSWR Output Third Order Intercept Output Third Order Intermod, Pout = 24 dBm (DCL) Gate Current Drain Current 1. 2. Symbol f POUT P1dB G PAE VSWR VSWR TOI IMD3 IGG IDD Typical 5.7-8.5 31 31 28 38 1.4:1 2.1:1 38 35 5 470 dBm dBc mA mA Units GHz dBm dBm dB % TB = MMIC Base Temperature Adjust VGG between -2.6 and -1.2V to achieve specified Idq. Amplifier, Power, 1.2W 5.7-8.5 GHz Maximum Ratings3 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 13 +12.0 -3.0 520 5.2 170 -55 to +150 MAAPGM0068-DIE Rev B Preliminary Datasheet Units dBm V V mA W C C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Drain Voltage Gate Voltage Input Power Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN JC TB Min 4.0 -2.6 Typ 8.0 -2.0 8.0 28.0 Note 5 Max 10.0 -1.2 11.0 Unit V V dBm C/W C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170C -- JC* VDD * IDQ Power Derating Curve, Quiescent (No RF) 6 5 Peak Power Dissipation (W) 4 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8.0 V. 3. Adjust VGG to set IDQ, (approximately @ -2.0 V). 4. Set RF input. 3 2 1 0 0 20 40 60 80 100 120 140 160 180 MMIC Base Temperature (C) 5. Power down sequence in reverse. Turn VGG off last. Amplifier, Power, 1.2W 5.7-8.5 GHz MAAPGM0068-DIE Rev B Preliminary Datasheet All Data is at 25C MMIC base temperature, CW stimulus, unless otherwise noted. 35 33 31 29 50 45 40 35 35 33 31 29 Pout (dBm) 25 23 21 19 17 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Pout PAE 25 20 15 10 5 0 10.5 P1dB (dBm) PAE (%) 27 30 27 25 23 21 19 17 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 6V 8V 10V Frequency (GHz) Frequency (GHz) Figure 1. Output Power and Power Added Efficiency at VD = 8V, Pin = 8dBm, and 25% IDSS 35 33 31 29 35 33 31 29 Figure 2. 1dB Compression Point and Drain Voltage at 25% IDSS Psat (dBm) 25 23 21 19 17 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 6V 8V 10V Psat (dBm) 27 27 25 23 21 19 17 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 -20C 25C 75C Frequency (GHz) Frequency (GHz) Figure 3. Saturated Output Power and Drain Voltage at 25% IDSS 45 43 Figure 4. Saturated Output Power and Temperature at 8V and 25% IDSS 6 1.0 40 36 32 28 24 20 16 12 8 4 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Gain Input VSWR Output VSWR Output Power (dBm), SSG(dB), PAE (%) 5 41 39 37 35 33 31 29 27 Pout SSG PAE IDS 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 150 Gain (dB) 4 3 2 1 10.5 25 30 40 50 60 70 80 90 100 110 120 130 140 Frequency (GHz) Junction Temperature (C) Figure 5. Small Signal Gain and Input and Output VSWR at 25% IDSS and VD = 8V Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 8V, 7.5 GHz, and 25% IDSS Drain Current (A) VSWR Amplifier, Power, 1.2W 5.7-8.5 GHz MAAPGM0068-DIE Rev B Preliminary Datasheet All Data is at 25C MMIC base temperature, CW stimulus, unless otherwise noted. 40 38 36 34 32 35 33 31 29 Output Power (dBm) 30 26 24 22 20 18 16 14 12 10 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 6 GHz 7 GHz 8 GHz 9 GHz Gain (dB) 28 27 25 23 21 19 17 15 12 14 16 18 20 22 24 26 28 30 32 34 36 6 GHz 7 GHz 8 GHz Input Power (dBm) Figure 7. Output Power vs. Input Power and Frequency at 10V and 25% IDSS 1.0 50 0.9 45 40 35 30 25 20 15 10 5 0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 6 GHz 7 GHz 8 GHz 9 GHz 0.8 0.7 Output Power (dBm) Figure 8. Gain vs. Output Power and Frequency at 10V and 25% IDSS Drain Current (A) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 6 GHz 7 GHz 8 GHz 9 GHz PAE (%) Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and 25% IDSS Input Power (dBm) Figure 10. Drain Current vs. Input Power and Frequency at 10V and 25% IDSS 40 38 36 34 32 35 33 31 29 27 25 23 21 19 17 15 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 12 14 16 18 20 22 24 26 28 30 32 34 36 6 GHz 7 GHz 8 GHz Output Power (dBm) 30 26 24 22 20 18 16 14 12 10 6 GHz 7 GHz 8 GHz 9 GHz Gain (dB) 28 Input Power (dBm) Figure 11. Output Power vs. Input Power and Frequency at 8V and 25% IDSS Output Power (dBm) Figure 12. Gain vs. Output Power and Frequency at 8V and 25% IDSS Amplifier, Power, 1.2W 5.7-8.5 GHz 1.0 50 45 40 35 30 25 20 15 10 5 0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 6 GHz 7 GHz 8 GHz 9 GHz 0.9 0.8 0.7 MAAPGM0068-DIE Rev B Preliminary Datasheet All Data is at 25C MMIC base temperature, CW stimulus, unless otherwise noted. Drain Current (A) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 6 GHz 7 GHz 8 GHz 9 GHz PAE (%) Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and 25% IDSS 50 48 46 44 42 40 70 90 80 100 Input Power (dBm) Figure 14. Drain Current vs. Input Power and Frequency at 8V and 25% IDSS 6 GHz 7 GHz 8 GHz TOI (dBm) 36 34 32 30 28 26 24 22 20 1 3 5 7 9 11 13 15 17 19 21 6 GHz 7 GHz 8 GHz IMD3 (dBc) 38 60 50 40 30 20 10 0 1 3 5 7 9 11 13 15 17 19 21 Fundamental Output Power, Single Tone (dBm) Figure 15. Third Order Intercept vs. Output Power and Frequency at 6V. Fundamental Output Power per Tone (dBm) Figure 16. Third Order Intermod vs. Output Power and Frequency at 6V. 50 48 46 44 42 40 100 90 80 70 6 GHz 7 GHz 8 GHz TOI (dBm) 36 34 32 30 28 26 24 22 20 1 3 5 7 9 11 13 15 17 19 21 6 GHz 7 GHz 8 GHz IMD3 (dBc) 38 60 50 40 30 20 10 0 1 3 5 7 9 11 13 15 17 19 21 Fundamental Output Power, Single Tone (dBm) Figure 17. Third Order Intercept vs. Output Power and Frequency at 8V. Fundamental Output Power per Tone (dBm) Figure 18. Third Order Intermod vs. Output Power and Frequency at 8V. Amplifier, Power, 1.2W 5.7-8.5 GHz MAAPGM0068-DIE Rev B Preliminary Datasheet All Data is at 25C MMIC base temperature, CW stimulus, unless otherwise noted. 50 48 46 44 42 40 70 90 80 6 GHz 7 GHz 8 GHz 100 TOI (dBm) 36 34 32 30 28 26 24 22 20 1 3 5 7 9 11 13 15 17 19 21 6 GHz 7 GHz 8 GHz IMD3 (dBc) 38 60 50 40 30 20 10 0 1 3 5 7 9 11 13 15 17 19 21 Fundamental Output Power, Single Tone (dBm) Figure 19. Third Order Intercept vs. Output Power and Frequency at 10V. Fundamental Output Power per Tone (dBm) Figure 20. Third Order Intermod vs. Output Power and Frequency at 10V. 50 48 46 44 60 55 50 45 40 38 36 34 32 30 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 6 GHz 7 GHz 8 GHz IMD3 (dBc) TOI (dBm) 42 40 35 30 25 20 15 10 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 6 GHz 7 GHz 8 GHz MMIC Base Temperature (C) Figure 21. Third Order Intercept vs. Temperature and Frequency at 8V and Pout = 24 dBm DCL. MMIC Base Temperature (C) Figure 22. Third Order Intermod vs. Temperature and Frequency at 8V and Pout = 24 dBm DCL. Amplifier, Power, 1.2W 5.7-8.5 GHz Mechanical Information Chip Size: 2.000 x 3.150 x 0.075 mm (78 x 124 x 3 mils) MAAPGM0068-DIE Rev B Preliminary Datasheet Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 23. Die Layout Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG Size (m) 100 x 200 200 x 150 150 x 150 Size (mils) 4x8 8x6 6x6 Amplifier, Power, 1.2W 5.7-8.5 GHz Assembly and Bonding Diagram VDD MAAPGM0068-DIE Rev B Preliminary Datasheet 0.01-0.1F GND VDD VGG Gnd RF 100200 pF VDD RFIN RFOUT 100200 pF 300 VGG 0.01-0.1F GND Figure 24. Recommended operational configuration. Wire bond as shown. Die Handling: Refer to Application Note AN3016. Assembly Instructions: Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 C to less than 7 minutes. Refer to Application Note AN3017 for more detailed information. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. |
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